Bertness, K.
, Li, W.
, Brubaker, M.
, Spann, B.
and Fay, P.
(2017),
GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope, IEEE Electron Device Letters, [online], https://doi.org/10.1109/LED.2017.2785785
(Accessed May 17, 2025)
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GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope
Published
Author(s)
, Wenjun Li, , , Patrick Fay
Abstract
Top-gated GaN nanowire MOSFETs using Al2O3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 98 A/m (normalized by wire diameter), off-current below 10-6 A/m, on/off ratio over 108, and an intrinsic transconductance of 155 S/m. The field-effect channel electron mobility is extracted to be 37 cm2/V-s at 300 K, which is primarily limited by acoustic phonon and impurity scattering. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.Citation
IEEE Electron Device Letters
Volume
49
Issue
2
Pub Type
Journals
Download Paper
Keywords
Gallium nitride, field-effect mobility, MOSFET, nanowire
Citation
Issues
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Created December 21, 2017, Updated December 19, 2019