Davydov, A.
, Obeng, Y.
, Orji, N.
, Celano, U.
, Schmidt, D.
and Beitia, C.
(2024),
Metrology for 2D materials: a perspective review from the international roadmap for devices and systems, Nanoscale Advances, [online], https://doi.org/10.1039/D3NA01148H, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956896
(Accessed May 12, 2025)
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Metrology for 2D materials: a perspective review from the international roadmap for devices and systems
Published
Author(s)
, , , Umberto Celano, Daniel Schmidt, Carlos Beitia
Abstract
The international roadmap of devices and systems (IRDS) projects that 2D materials will be inserted into high-volume manufacturing as channel materials, mostly for low-power applications within the next ten years. While their broader introduction in the advanced chip manufacturing environment is still limited, it is obvious that a multitude of characterization methods is required to access their structural, electrical, compositional, and mechanical properties, and for monitoring and tuning of their properties in mass-produced devices. This lab-to-fab transition is still in the early stage, and we note that although a one-size-fits-all metrology solution does not exist yet, rapid progress has been made by the community in a relatively short timeframe, thus indicating exciting times ahead. In this paper, we review existing measurement capabilities and gaps in key areas of dedicated metrology for CMOS-compatible 2D materials and describe the fundamental measurement science limits associated with these techniques when applied to 2D materials for high-volume semiconductor manufacturing environment.Citation
Nanoscale Advances
Pub Type
Journals
Keywords
2D materials, roadmap, microelectronics, transition metal dichalcogenides (TMD), metrology
Citation
Issues
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Created April 8, 2024, Updated April 12, 2024